In the Technion ASIC2 Research Group we investigate the implications of emerging technologies in Computer Architecture, VLSI Systems, and Integrated Circuit Design.
In the context of this research, resistive switching devices such as Resistive RAM (RRAM), Spin-Transfer Torque Magnetoresistance RAM (STT-MRAM), Phase Change Memory (PCM), 3D Xpoint, and more, best known as memristors, are used for various applications, such as energy-efficient architectures, memory design, logic circuits, analog and mixed-signal circuits, hardware security, neuromorphic and cytomorphic computing. ASIC2 is also very much involved in developing simulators, device models, and tools for computer-aided design.
Photo of Prof. Shahar Kvatinsky
Prof. Shahar Kvatinsky
Photo of Ilan Lipschutz
Ilan Lipschutz
Photo of Ilana Zilberger
Ilana Zilberger
Photo of Ronny Ronen
Ronny Ronen
Photo of Rotem Ben-Hur
Rotem Ben-Hur
Photo of Barak Hoffer
Barak Hoffer
Photo of Lior Rodes
Lior Rodes
Photo of Orian Leitersdorf
Orian Leitersdorf
Photo of Rishona Daniels
Rishona Daniels
Photo of Duna Wattad
Duna Wattad
Photo of Sariel Hodisan
Sariel Hodisan
Photo of Ofri Levin
Ofri Levin
Photo of Nir Ben-Haim
Nir Ben-Haim
Photo of Henriette Padberg
Henriette Padberg
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Undergraduate Projects banner
H. Padberg, A. Regev, G. Piccolboni, A. Bricalli, G. Molas, J. F. Nodin, and S. Kvatinsky "Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R SiOx Valence Change Mechanism Memristors"
O. Leitersdorf, Y. Boneh, G. Gazit, R. Ronen, and S. Kvatinsky "FourierPIM: High-throughput in-memory Fast Fourier Transform and polynomial multiplication"
A. Gero, M. A. Hadish, and S. Kvatinsky "Undergraduate Students’ Attitudes Toward an Engineering Course that Integrates Several Levels of Abstraction"
M. A. Hadish, S. Kvatinsky, and A. Gero "Learning and Instruction that Combine Multiple Levels of Abstraction in Engineering: Attitudes of Students and Faculty"