/* Physical Dimensions of IPCS */

	parameter real WH = 2u; // Width of heater
	parameter real LH = 20u; // Length of the heater
	parameter real WRF = 20u; // Width of RF contact
	parameter real LRF = 2u; // // Length of the RF gap
	parameter real t_W = 100n; // Thickness of the heater
	parameter real t_GeTe = 120n; // Thickness of GeTe
	parameter real t_TB = 50n; // Thickness of SiNx (dielectric 2)
	parameter real t_capping = 30n; // Thickness of capping/passivation layer
	parameter real t_SiOx = 100n; // Thickness of SiOx (dielectric 1)
	parameter real t_Si = 500u; // Thickness of Si substrate
	parameter real t_contacts=150n; //Thickness of the contacts

/* Thermal Properties */
	real k_W = 20.3; //Thermal conductivity of Tungsten
	real cv_W = 2.58M; // Heat capacity of Tungsten
	real k_SiOx = ln(293**0.52)-1.5737; // Thermal conductivity of SiOx (dielectric 2)
	real cv_SiOx = 2.27M; // Heat capacity of SiOx(dielectric 2)
	real k_Si = 4e4/293; // Thermal conductivity of Si
	real cv_Si = 1.657M; // Heat capacity of Si
	real k_SiNx = 2.2; // 3// Thermal conductivity of SiNx (dielectric 2)
	real cv_SiNx = 2.28M; //2.28 Heat capacity of SiNx (dielectric 2)
	real k_GeTe = 2.2; // 2.2 // Thermal conducitivity of GeTe
	real cv_GeTe = 3.07M; // 3.07// Heat capacity of GeTe
	real TCR = 0.0013; // Thermal coeficient of resistance of Tungsten
	real TBR = 1.3; // Thermal boundary resistance of SiOx-W interface

/* Electrical Parameters */
	parameter real Rsh_heater0 = 3.6; // Heater resistance at RT
	parameter real Rc_heater= 13e-6; // Contact resistance of the heater
	parameter real Rc_GeTe=10e-6; // Contact resistance of GeTe
	parameter real Rsh=33; // Crystalline phase sheet resistance
	parameter real Roff=10e3; // Amorphous phase resistance
	parameter real Ta=998; // Amorphization temperature
	parameter real Tc=773; // Crystallization temperature (~400 C)

/* Auxiliary parameters */ 
	parameter real init_state=0; // Sets the initial state of the IPCS (0= amporphous / 1=crystalline)
	parameter real dt=1e-9; // step dt